GaN WIDE BAND POWER INTEGRATED CIRCUITS (PREPRINT)
نویسندگان
چکیده
Gallium Nitride (GaN) amplifiers have demonstrated very high power density as well as wide band width in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large band width. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4GHz bandwidth with 30 dBm P1dB output power. The 3GPP WCDMA output power is 20 dBm at -45 dBc ACLR. Index Terms — Gallium Nitride (GaN), High Electron Mobility Transistor (HEMT), Linearity, Power Amplifiers, Software Defined Radio, Wide Band.
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